| 报告题目： |
Ti doped Sapphire crystals-Growth and characterization |
| 报告人： |
Gourav SEN |
| 报告人单位： |
Grenoble Institute of Technology |
| 报告时间： |
2018年5月4日16:00 |
| 报告地点： |
引力中心三楼会议室 |
| 报告摘要： |
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There is a huge interest in construction of solid state lasers capable of reaching petawatt (PW) levels. In order to achieve this level of power, Ti:Sapphire amplifiers greater than 20 cm in diameter are required and hence there is the need to grow large diameter crystals. To achieve this the existing crystal growth technology was improved to be more productive and studies were carried out to develop a completely autonomous growth system to control the crystal shape. Crystals were characterised for defects which affect their optical properties and an explanation for the origin of this defect is proposed. |
| 报告人简介： |
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Gourav Sen is a postdoctoral researcher working at SIMaP laboratory affiliated to CNRS in Grenoble, France. He defended his PhD titled‘Kyropoulos Growth and Characterisation of Titanium doped Sapphire’at Universite Grenoble Alpes under the supervision of Prof. Thierry Duffar in January 2018. His research studies have been in the field of crystal growth and characterization during his PhD. He is visiting the Centre for Gravitational experiments to collaborate with Assoc. Prof. Jean Michel Guy Le Floch in an effort to study and characterize impurity ions in Sapphire crystals. |
